Published June 1982
| Version v1
Journal article
Plasma oxidation of silicon
Creators
- 1. Liverpool Univ. (UK). Dept. of Electrical Engineering and Electronics
Description
A brief review of the techniques used to oxide silicon in oxygen discharges is given and a series of experiments that have been carried out to identify the oxidizing species are described. There is strong evidence to suggest that the negative ion O- is responsible for the observed phenomenon. (author)
Additional details
Publishing Information
- Journal Title
- Plasma Phys.
- Journal Volume
- 24
- Journal Issue
- 6
- Series
- Plasma Phys.
- Journal Page Range
- 605-614
- ISSN
- 0032-1028
Conference
- Title
- 8. annual conference of the Institute of Physics Plasma Physics Group.
- Dates
- 8 - 10 Jul 1981.
- Place
- Swansea (UK).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 14730231
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC ARCS; ELECTRIC DISCHARGES; GLOW DISCHARGES; OXIDATION; OXYGEN; OXYGEN IONS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; IONS; NONMETALS; SEMIMETALS