Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs^1–xP^x, GaAs^xSb^1–x, and GaP^xSb^1–x layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04