Published November 1, 1972
| Version v1
Journal article
n--p junction ir detectors made by proton bombardment of epitaxial PbTe
Description
Proton bombardment has been used to make n-p junction ir detectors from epitaxial PbTe films on BaF2 substrates. When cooled at 77°K, these detectors are background limited at f/0.8; further reduction of the field of view gives Johnson-noise-limited peak detectivities of 6×1011 cm Hz1/2W−1 at f/20. The peak quantum efficiencies are 0.40–0.47.
Additional details
Identifiers
- DOI
- 10.1063/1.1654434;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 21
- Journal Issue
- 9
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 411-413
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4057412
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- EFFICIENCY; EPITAXY; FABRICATION; FILMS; INFRARED RADIATION; JUNCTION DETECTORS; KEV RANGE 100-1000; LEAD COMPOUNDS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PROTON BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; TELLURIDES
- Descriptors DEC
- BEAMS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; KEV RANGE; MEASURING INSTRUMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent