Published 1973 | Version v1
Report Metadata-only

Resistivity recovery of electron irradiated tantalum

Creators

Description

High-purity tantalum foils were irradiated with 3.0MeV electrons. After that the annealing of the crystal defects in the temperature range 5K to 380K (a few samples to 580K) was investigated by residual resistance measurements. In all recovery stages, the reaction order, the activation energies, and the frequency factors could be determined. An analysis of the recovery processes is presented. (GSCH)

Abstract (German)

Es wurden hoechstreine Tantalfolien mit Elektronen der Energie 3.0MeV bestrahlt. Anschliessend wurde das Ausheilen der atomaren Fehlstellen von 5K bis 380K (Einzelproben bis 580K) mithilfe von Restwiderstandsmessungen untersucht. In allen Erholungsstufen konnten die Reaktionsordnungen, die Aktivierungsenergien und die Frequenzfaktoren bestimmt werden. Eine Analyse der Erholungsvorgaenge wird gegeben. (GSCH)

Additional details

Additional titles

Original title (German)
Die Erholung des elektrischen Widerstandes von elektronenbestrahltem Tantal

Publishing Information

Imprint Pagination
68 p.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
7262772
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FRENKEL DEFECTS; IMPURITIES; IRRADIATION DEVICES; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SAMPLE PREPARATION; TANTALUM; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE
Descriptors DEC
BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; ENERGY RANGE; HEAT TREATMENTS; LEPTON BEAMS; METALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; TRANSITION ELEMENTS; VACANCIES

Optional Information

Notes
2 tabs.; 57 refs.; with figs. Available from ZAED.