Published 1999 | Version v1
Miscellaneous Open

Fine structure of angular distributions for 1 GeV electrons in silicon single crystals

  • 1. Inst. Teoreticheskoj Fiziki NNTs KhFTI, Khar'kov (Ukraine)

Description

no abstract available

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Part of:
Abstracts of the reports from the 29. International conference on physical aspects of charge particle interactions with crystals

Additional details

Additional titles

Original title (Russian)
Тонкая структура угловых распределений электронов с энергией порядка 1 GEhV в монокристаллах кремния

Publishing Information

Publisher
Moskovskij Gosudarstvennyj Univ.
Imprint Place
Moscow (Russian Federation)
Imprint Title
Abstracts of the reports from the 29. International conference on physical aspects of charge particle interactions with crystals
Imprint Pagination
139 p.
Journal Page Range
p. 42
Report number
INIS-RU--434

Conference

Title
29. International conference on physical aspects of charged particle interactions with crystals
Original Conference Title
29. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
31 May - 2 Jun 1999
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
30050843
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
ANGULAR DISTRIBUTION; COMPUTERIZED SIMULATION; ELECTRON BEAMS; ELECTRON CHANNELING; ELECTRON DIFFRACTION; FINE STRUCTURE; GEV RANGE 01-10; INCIDENCE ANGLE; MONOCRYSTALS; SILICON
Descriptors DEC
BEAMS; CHANNELING; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DISTRIBUTION; ELEMENTS; ENERGY RANGE; GEV RANGE; LEPTON BEAMS; PARTICLE BEAMS; SCATTERING; SEMIMETALS; SIMULATION

Optional Information

Notes
2 refs. Imprint:Tezisy dokladov 29. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami