Published 1985
| Version v1
Book
Refractory metals growth on MBE GaAs
Creators
- 1. Nuclear Research Center-Negev, POB 9001, Beer-Sheva 84190 (Israel)
Description
Molybdenum and tungsten metals have been grown on an MBE grown (100)GaAs at various substrate temperatures. RHEED technique was used in situ to analyse the crystalline structure and the growth mechanism of the mechanism of the thin metal films. It was found that Mo epilayers can be grown on the (100) GaAs at temperatures between 150-4000C. The epitaxial arrangement is (111)Mo parallel (100)GaAs with [011]Mo parallel [011]GaAs. Tungsten films are not growing epitaxially under similar experimental conditions
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-13-8
- Imprint Title
- Applied materials characterization
- Journal Page Range
- p. 13-18.
Conference
- Title
- 2. spring meeting of the Materials Research Society.
- Dates
- 15-18 Apr 1985.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19075705
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; CRYSTAL STRUCTURE; EPITAXY; GALLIUM ARSENIDES; HIGH TEMPERATURE; IN-SITU PROCESSING; MOLECULAR BEAMS; MOLYBDENUM; TEMPERATURE DISTRIBUTION; THIN FILMS; TUNGSTEN
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELEMENTS; FILMS; GALLIUM COMPOUNDS; METALS; ORE PROCESSING; TRANSITION ELEMENTS