Published June 25, 2012 | Version v1
Journal article

Intense white luminescence in ZnTe embedded porous silicon

  • 1. Physics Faculty, University of Havana, La Habana (Cuba)
  • 2. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universtaria, A.P. 70-360, Coyoacán 04510 (Mexico)
  • 3. Department of Physics, CINVESTAV, IPN (Mexico)
  • 4. Departmento de Física Aplicada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

Description

Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense room temperature photoluminescence along the whole visible range. We ascribe this PL to ZnTe nanocrystals of different sizes grown on the internal pore surface. Such crystals, with different orientations and sizes, were observed in transmission electron microscopy images, while transmission electron diffraction images of the same regions reveal ZnTe characteristic patterns.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
26
Journal Page Range
p. 263110-263110.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics