Published September 15, 1971
| Version v1
Report
Dependence of defect introduction on temperature and resistivity and some long-term annealing effects
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Proceedings of the fourth annual conference on effects of lithium doping on silicon solar cells
- Imprint Pagination
- p. 35-39.
- Report number
- JPL-TM--33-491
Conference
- Title
- 4. annual conference on effects of lithium doping on silicon solar cells.
- Dates
- 29 Apr 1971.
- Place
- Pasadena, Calif.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4037395
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ELECTRIC CONDUCTIVITY; POINT DEFECTS; RADIATION EFFECTS; SOLAR CELLS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; HEAT TREATMENTS; PHYSICAL PROPERTIES