The development of new methods for the analysis of liquid samples using ion beams
Creators
- 1. Atomic Energy Commission, Damascus (Syrian Arab Republic). Dept. of Physics
Description
The use of high pure industrial crystalline Si wafers as backing materials for PIXE elemental analysis of aqueous liquid samples has been investigated. It can potentially be applied as supporting material of liquid samples owing to its advantages being available at high purity, resistant to ion beam heating effects, unaffected by chemicals, surface easily cleanable, semi-conductor that inhibits local ion beam charging effects, durable, relatively cheap and easily prepared for liquid sample deposition. Sample preparation procedure, deposition homogeneity aspects, experimental system and ion beam parameters optimization have been discussed. Comprehensive conditions study to perform direct PIXE measurements on reference aqueous liquid sample containing 27 elements micropipetted on Si wafers has been implemented. A combination of minimum sample preparation procedures and specific experimental conditions applied enables simple and accurate elemental analysis. Elemental concentrations, at about 5-15% absolute accuracy and uncertainties less than 15% for most elements detected, sensitivity curves, detection limits have been determined. Advantages and limitations of using Si wafers in this investigation have been discussed. Comprehensive literature comparison with other backing materials has been reviewed. (author)
Files
54056934.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 32 p.
- Report number
- AECS-PH/FRSR--815
INIS
- Country of Publication
- Syrian Arab Republic
- Country of Input or Organization
- Syrian Arab Republic
- INIS RN
- 54056934
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- AQUEOUS SOLUTIONS; EXPERIMENTAL DATA; ION BEAMS; PIXE ANALYSIS; SAMPLING; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- BEAMS; CHEMICAL ANALYSIS; DATA; DISPERSIONS; ELEMENTS; HOMOGENEOUS MIXTURES; INFORMATION; MATERIALS; MIXTURES; NONDESTRUCTIVE ANALYSIS; NUMERICAL DATA; SEMIMETALS; SOLUTIONS; X-RAY EMISSION ANALYSIS
Optional Information
- Notes
- 42 refs. , 15 figs.