Published 2020 | Version v1
Book Metadata-only

Materials mixing in pseudomorphically stressed heterostructures based on A3-B5 quaternary solid solutions

Creators

  • 1. Novosibirskij Gosudarstvennyj Univ., Novosibirsk (Russian Federation)
  • 2. Inst. Fiziki Poluprovodnikov SO RAN im. A.V. Rzhanova, Novosibirsk (Russian Federation)

Description

The processes of material mixing during the epitaxial growth of heterostructures with quantum wells (QWs) consisting of strained quaternary solid solutions of InGaAsP in GaP matrix and InAlAsSb and GaAlAsSb in an AlAs matrix are considered. It is shown that an increase of In atoms content in InGaAsP/GaP and InAlAsSb/AlAs QWs leads to a decrease of As and Sb atoms content, respectively. At the same time, a change of Ga atoms content in the composition of the GaAlAsSb/AlAs QW does not noticeably affects the content of Sb in the composition of the QW. The detected effect is conditioned by mechanical stresses caused by the mismatch between the lattice parameters of the QW materials and the matrix ones

Abstract (Russian)

Рассматриваются процессы перемешивания материалов в ходе эпитаксиального роста гетероструктур с квантовыми ямами (КЯ), состоящих из напряжённых четверных твердых растворов InGaAsP в матрице GaP и InAlAsSb и GaAlAsSb в матрице AlAs. Показано, что увеличение доли атомов In в InGaAsP/GaP и InAlAsSb/AlAs КЯ ведёт к снижению доли атомов As и Sb, соответственно. В то же время изменение доли атомов Ga в составе GaAlAsSb/AlAs КЯ не оказывает заметного влияния на содержание Sb в составе КЯ. Обнаруженный эффект обусловлен механическими напряжениями, вызванными рассогласованием параметров решётки материалов КЯ и матрицы
Part of:
The First All-Russian scientific conference with international participation «Yenisei Photonics – 2020». Abstracts of reports

Additional details

Additional titles

Original title (Russian)
Перемешивание материалов в псевдоморфно напряженных гетероструктурах на основе четверных твердых растворов A3-B5

Publishing Information

Publisher
Izdatel'stvo IF SO RAN
Imprint Place
Krasnoyarsk (Russian Federation)
ISBN
978-5-6042995-8-6
Imprint Title
The First All-Russian scientific conference with international participation #Left-Pointing Double Angle Quotation Mark#Yenisei Photonics #En Dash# 2020#Right-Pointing Double Angle Quotation Mark#. Abstracts of reports
Imprint Pagination
198 p.
Journal Page Range
p. 102-103

Conference

Title
1. All-Russian scientific conference with international participation ''Yenisei Photonics - 2020''
Original Conference Title
Pervaya Vserossijskaya nauchnaya konferentsiya s mezhdunarodnym uchastiem «Enisejskaya Fotonika – 2020»
Dates
14-19 Sep 2020
Place
Krasnoyarsk (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
53089512
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; ANTIMONIDES; CHEMICAL COMPOSITION; CONCENTRATION RATIO; EPITAXY; FLUORESCENCE; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LATTICE PARAMETERS; MATRIX MATERIALS; MIXING; MOLECULAR STRUCTURE; QUANTUM WELLS; SOLID SOLUTIONS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; DISPERSIONS; ELECTRON MICROSCOPY; EMISSION; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; MIXTURES; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SOLUTIONS

Optional Information

Notes
7 refs., 1 fig. Imprint:Pervaya Vserossijskaya nauchnaya konferentsiya s mezhdunarodnym uchastiem #Left-Pointing Double Angle Quotation Mark#Enisejskaya Fotonika #En Dash# 2020#Right-Pointing Double Angle Quotation Mark#. Tezisy dokladov