Published 1998 | Version v1
Miscellaneous Metadata-only

Morphology and optical properties of cubic phase GaN epilayers grown on (001)Si

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Semicond. Sci. and Technol. Lab., Macquarie Univ., North Ryde (Australia)
  • 3. Microstructural Analysis Unit, University of Technology, Sydney (Australia)
  • 4. Department of Physics and Measurement Technology, Linkoeping University, Linkoeping (Sweden)
  • 5. CEA/Grenoble, Departement de Recherche Fondamentale sur la Matiere Condensee/SP2M, Grenoble (France)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Additional titles

Augmented title (English)
thin films

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 58

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064569
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CUBIC LATTICES; GALLIUM NITRIDES; MEETINGS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; THIN FILMS
Descriptors DEC
CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS

Optional Information