Published November 7, 2004 | Version v1
Journal article

Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, and National Center for Nano-Science and Technology, Beijing 100080 (China)
  • 2. Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  • 3. Beijing University of Technology, Beijing 100022 (China)

Description

The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/37/3058/d4_21_017.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
37
Journal Issue
21
Journal Page Range
p. 3058-3062
ISSN
0022-3727
CODEN
JPAPBE