Published 1999
| Version v1
Journal article
Local atomic structure of deep level centers in doped II-VI semiconductors
- 1. Departamento de Fisica Aplicada, Centro de Investigacion de Estudios Avanzados, Unidad Merida, 97310 Merida, Yucatan (Mexico)
- 2. Departamento de Fisica, centro de Investigacion y de estudios avanzados, 14750 Mexico D.F. (Mexico)
Description
Theoretical models of the local atomic structure of deep level centers produced by doping of II-VI semiconductors are reviewed. X-ray absorption spectroscopy (XAS) measurements on zinc-selenide doped with chlorine are presented. From the changes observed in the spectra with increasing chlorine concentrations, the existence of lattice distortions around the dopant sites is inferred. The relation of such lattice distortions with the proposed theoretical models is discussed. (Author)
Additional details
Publishing Information
- Journal Title
- Revista Mexicana de Fisica
- Journal Volume
- 45
- Journal Issue
- Suppl.1
- Journal Page Range
- p. 167-170
- ISSN
- 0035-001X
- CODEN
- RMXFAT
INIS
- Country of Publication
- Mexico
- Country of Input or Organization
- Mexico
- INIS RN
- 30047377
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ABSORPTION SPECTRA; CHLORINE ADDITIONS; CRYSTAL DOPING; DIAGRAMS; FOURIER TRANSFORM SPECTROMETERS; LANL; LATTICE PARAMETERS; SEMICONDUCTOR MATERIALS; X-RAY SPECTROSCOPY; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; INFORMATION; MATERIALS; MEASURING INSTRUMENTS; NATIONAL ORGANIZATIONS; SELENIDES; SELENIUM COMPOUNDS; SPECTRA; SPECTROMETERS; SPECTROSCOPY; US DOE; US ORGANIZATIONS; ZINC COMPOUNDS