An advanced characterization of defects in thin oxides

In this work we present a detailed characterization of thin oxide degradation. Starting from the experimental conditions of electrical stress, an electron scattering based model gives the time evolution of defect density. The calculated defect density is used as input parameter of models of leakage current (SILC) and low-frequency capacitance (C-f). From reproduction of experimental data of SILC and C-f, the electron scattering length, defect density in the dielectric can be extracted. A very good agreement between experimental results and simulation strongly supports the comprehensive model of oxide degradation presented here