Published August 1996 | Version v1
Journal article

High-temperature electrochemical synthesis of molybdenum carbide on the surface of dielectric and semiconductors in ionic

  • 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Obshchej i Neorganicheskoj Khimii

Description

Systems for conducting high-temperature electrochemical synthesis of molybdenum carbide on the surface of diamond, boron nitride, silicon and boron carbides have been chosen on the basis of thermodynamic analysis and study of electrochemical behaviour of dielectrics and semiconductors in ionic melts. Deposition of molybdenum carbide on the surface of the dielectrics and semiconductors mentioned took place after their keeping in Na2WO4-MoO3-LiCO3 or KCl-NaCl-Na2MoO4-Na2CO3 melts at temperatures of 1073-1173 K and cathode current densities of 10-100 A/m2. 16 refs.; 6 figs.; 2 tabs

Additional details

Additional titles

Original title (Russian)
Высокотемпературный электрохимический синтез карбида молибдена на поверхности диэлектриков и полупроводников в ионных расплавах

Publishing Information

Journal Title
Zhurnal Prikladnoj Khimii
Journal Volume
69
Journal Issue
8
Journal Page Range
p. 1314-1320.
ISSN
0044-4618
CODEN
ZPKHAB