Published March 1972
| Version v1
Journal article
Electrical characteristics of rf-sputtered single-crystal niobium films
Creators
Description
It is shown from measurements of the resistivity ratio (RR ≡ resistivity at room temperature divided by resistivity at 10°K), superconducting transition temperature, and transition-temperature width that high-quality single-crystal niobium films can be fabricated by rf sputtering. The observed dependence of RR on sample thickness indicates that the intrinsic electron mean free path increases with thickness. Superconducting characteristics are essentially thickness independent for films thicker than approximately 1000 Å.
Additional details
Identifiers
- DOI
- 10.1063/1.1661258;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 43
- Journal Issue
- 3
- Series
- J. Appl. Phys.
- Journal Page Range
- 1287-1289
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 3024598
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FILMS; MONOCRYSTALS; NIOBIUM; RADIOWAVE RADIATION; SPUTTERING; SUPERCONDUCTIVITY; THICKNESS; TRANSITION TEMPERATURE
- Descriptors DEC
- CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; METALS; PHYSICAL PROPERTIES; RADIATIONS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent