Published February 3, 2014 | Version v1
Journal article Metadata-only

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001¯) surfaces

Creators

  • 1. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
  • 2. Laser and Synchrotron Research Center, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  • 3. Nanoscale Science Division, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  • 4. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan)

Description

An epitaxial silicon-oxide monolayer of chemical composition of Si2O3 (the Si2O3 layer) formed on hexagonal SiC(0001¯) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si2O3 layer are found to be missing SiOn (n = 1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9 eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices

Additional details

Identifiers

DOI
10.1063/1.4863753;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
5
Journal Page Range
p. 051601-051601.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45104661
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; HEXAGONAL LATTICES; INTERFACES; LAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; SILICON CARBIDES; SILICON OXIDES; SURFACES; TUNNEL EFFECT
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SPECTROSCOPY

Optional Information

Notes
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