Published 1989 | Version v1
Journal article Metadata-only

EL2 and the electronic structure of the AsGa-Asi pair in GaAs: the role of Jahn-Teller relaxation and Coulomb interaction

Creators

  • 1. Bell Telephone Labs., Inc., Murray Hill, NJ (USA)

Description

The levels and excitation energies of the weakly interacting AsGa-Asi defect pair have been previously calculated using a model energy functional which includes Jahr-Teller relaxation. Many unrelated experimental observations about EL2 are well accounted for by this model. However, there are still properties of the model which are hard to reconcile with experiment. (author) 13 refs., 3 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
91-96
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20053758
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COULOMB FIELD; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; EXCITED STATES; GALLIUM ARSENIDES; JAHN-TELLER EFFECT
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ENERGY LEVELS; GALLIUM COMPOUNDS