Published January 2017 | Version v1
Journal article Metadata-only

Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal

Creators

  • 1. University of Science and Technology of China, Hefei (China)
  • 2. Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)
  • 3. Anhui Firesky Crystal Science and Technology Co. Ltd, Tongling (China)
  • 4. 26th Institute of China Electronics Technology Group Corporation, Chongqing (China)
  • 5. Shandong University, State Key Laboratory of Crystal Materials, Jinan (China)

Description

A new piezoelectric single crystal La3Ga4.85Fe0.15SiO14 (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient keff of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm-3 by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H2SO4 etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ε 11, ε 33, d11, and d14 are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-016-0611-9

Additional details

Identifiers

DOI
10.1007/s00339-016-0611-9;

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
123
Journal Issue
1
Journal Page Range
p. 1-7
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
48038145
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ABSORPTION SPECTRA; CZOCHRALSKI METHOD; DISLOCATIONS; EXPERIMENTAL DATA; GALLIUM OXIDES; IRON HYDROXIDES; LANTHANUM OXIDES; LATTICE PARAMETERS; MONOCLINIC LATTICES; MONOCRYSTALS; OPACITY; PERMITTIVITY; PIEZOELECTRICITY; SEGREGATION; SILICON OXIDES; SPACE GROUPS; VISIBLE SPECTRA; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; DATA; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRICITY; GALLIUM COMPOUNDS; HYDROGEN COMPOUNDS; HYDROXIDES; INFORMATION; IRON COMPOUNDS; LANTHANUM COMPOUNDS; LINE DEFECTS; NUMERICAL DATA; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SCATTERING; SILICON COMPOUNDS; SPECTRA; SYMMETRY GROUPS; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENT COMPOUNDS