Published June 1974
| Version v1
Journal article
Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current
Description
A new geometry DH laser is developed in which a very thin GaAs homojunction laser is sandwiched by (GaAl)As layers. The minimum threshold current is 63 and 80 mA for pulsed and cw operation at room temperature, respectively. The possibility of further reduction of threshold current is briefly mentioned.
Additional details
Identifiers
- DOI
- 10.1063/1.1663670;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 45
- Journal Issue
- 6
- Series
- J. Appl. Phys.
- Journal Page Range
- 2785-2786
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6173206
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- CONFIGURATION; ELECTRIC CURRENTS; GALLIUM ARSENIDES; LAYERS; SOLID STATE LASERS; SWITCHES
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; GALLIUM COMPOUNDS; LASERS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent