The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2

The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2