Published December 15, 2004 | Version v1
Journal article

Negative differential resistivity and positive temperature coefficient of resistivity effect in the diffusion-limited current of ferroelectric thin-film capacitors

  • 1. Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom)

Description

We present a model for the leakage current in ferroelectric thin-film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a positive temperature coefficient of resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be applicable in these systems. (letter to the editor)

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/L515/cm4_49_L04.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
49
Journal Page Range
p. L515-L521
ISSN
0953-8984
CODEN
JCOMEL