Published August 15, 1981
| Version v1
Journal article
Recovery of range-zone luminescence by pulsed laser annealing in Cd+-implanted GaAs
Description
The effects of 300-K implantation of 200-keV Cd+ ions and subsequent pulsed laser annealing in GaAs were investigated by means of depth-resolved cathodoluminescence at 80 K. We found that lattice order could be restored sufficiently to increase the implanation-quenched luminescence by 2--3 orders of magnitude with either ruby or Nd:glass lasers. Thus the luminescence is recovered to within an order of magnitude of that in unimplanted material
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 39
- Journal Issue
- 4
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 351-353
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12637836
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM IONS; CRYSTAL LATTICES; GALLIUM ARSENIDES; GLASS; ION IMPLANTATION; KEV RANGE; LASER-RADIATION HEATING; LOW TEMPERATURE; LUMINESCENCE; MEDIUM TEMPERATURE; NEODYMIUM LASERS; PULSES; RUBY LASERS; SCINTILLATION QUENCHING
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; HEATING; IONS; LASERS; PLASMA HEATING; SOLID STATE LASERS