Published October 1977
| Version v1
Journal article
Sensitivity of MOS structures to X and gamma doses
Creators
- 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
Description
The shift in the threshold voltage of an irradiated MOS transistor increases with the radiation dose and bias voltage applied to the gate during irradiation. The dependence of the threshold voltage shift on the oxide thickness was reported differently by different authors. The dependence is given of the threshold voltage shift on the gate bias, radiation dose, oxide thickness, free electron mobility and lifetime in SiO2. (author)
Additional details
Additional titles
- Original title (Czech)
- Citlivost MOS struktur k davkam zareni X a γ
Publishing Information
- Journal Title
- Radioisotopy
- Journal Volume
- 18
- Journal Issue
- 5
- Series
- Radioisotopy.
- Journal Page Range
- 703-734
INIS
- Country of Publication
- Serbia and Montenegro
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 10452931
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CHARGES; ELECTRIC POTENTIAL; EXPERIMENTAL DATA; GAMMA RADIATION; GRAPHS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIOSENSITIVITY; SILICON OXIDES; SPACE CHARGE; SPATIAL DISTRIBUTION; THICKNESS; X RADIATION
- Descriptors DEC
- CHALCOGENIDES; DATA; DATA FORMS; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; INFORMATION; IONIZING RADIATIONS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS