Published December 1986 | Version v1
Journal article

Damage profiles in copper single crystals after ion implantation

  • 1. Pretoria Univ. (South Africa). Dept. of Physics
  • 2. Wits-CSIR Schonland Research Centre for Nuclear Sciences, University of the Witwatersrand, Johannesburg (South Africa)

Description

Copper single crystals were implanted off-axis with carbon, neon and argon ions. Energies were chosen to obtain projected ranges between 50 and 60 nm. The resulting radiation damage was analysed by α-particle channelling using a back-scattering geometry. Auger electron spectroscopy was employed to determine the depth profiles of the implanted ions. In all cases the damage profiles extended much deeper than the projected ion ranges. The dependence of the damage depth on total fluence, energy and ion mass was investigated. Annealing of the radiation damage by conventional heating as well as pulsed electron beam irradiation was also studied

Additional details

Publishing Information

Journal Title
S. Afr. J. Phys.
Journal Volume
9
Journal Issue
4
Series
S. Afr. J. Phys.
Journal Page Range
135-138
ISSN
0379-4377
CODEN
SAPHD