Published December 1, 2016 | Version v1
Journal article

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

  • 1. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)
  • 2. School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)
  • 3. National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 4. School of Green Energy and Semiconductor Engineering, Hoseo University, Asan City, Chungnam, 336-795 (Korea, Republic of)

Description

A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2- [3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l'Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/25/12/128502

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
25
Journal Issue
12
Journal Page Range
[6 p.]
ISSN
1674-1056