Anneal characteristics of ion-implanted ZnO

Ion implantation of P, V, N, O, Ar and Ne into n-type Li-doped ZnO has been investigated with energy up to 300 keV at dose levels 1012-1016 cm−2. Measurements of sheet conductivity and Hall mobility as a function of anneal temperature have given evidence of n-type layers after P and V implantation, with sheet conductivities 105 times higher than unimplanted and Ar-implanted material. It has also been found that an isochronal anneal sequence, terminated by a 1 h, 450 °C vacuum anneal and then a water quench, is sufficient to remove most of the electrical effects of damage produced by ion implantation.