Characterization of doped PEDOT: PSS and its influence on the performance and degradation of organic solar cells
- 1. Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
- 2. Department of Physics, Zakir Husain Delhi College, University of Delhi, Delhi 110002 (India)
- 3. Department of Physics, Ramjas College, University of Delhi, Delhi 110007 (India)
Description
The present work is a detailed study of the optical, morphological and electrical properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS, films doped with ethylene glycol (EG) and multi-walled carbon nanotubes (MWCNT). The conductivity of PEDOT:PSS films doped with EG and MWCNT is higher than pristine PEDOT:PSS film. The optical transparency of PEDOT:PSS film decreases insignificantly after addition of MWCNT and EG. The films were further studied using atomic force microscopy, x-ray diffraction, Raman spectroscopy and Kelvin probe work function measurement, after which films of PEDOT:PSS with EG and MWCNT were optimized for the fabrication of solar cells. The optimized film was used as a hole extracting layer in a typical ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell. The suitable concentration for an optimized film was found to be 4% MWCNT and 1:4 ratio of EG to PEDOT:PSS. The performance of the device with doped PEDOT:PSS was found to improve in terms of short circuit current density (JSC) and efficiency (η). The solar cell with a doped PEDOT:PSS layer showed higher JSC and η due to the increase in the interchains among PEDOT chains along with the introduction of MWCNT channels in PEDOT:PSS matrix. The degradation behavior of the cells was studied and it was found that both pristine and doped PEDOT:PSS cells showed similar trends of degradation. The performance degradation with time was also studied under variable environmental conditions, which showed different aging rates for the two devices. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/29/4/045020Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- [8 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46083660
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; CONCENTRATION RATIO; CURRENT DENSITY; DOPED MATERIALS; EFFICIENCY; ELECTRICAL PROPERTIES; FABRICATION; FILMS; GLYCOLS; HOLES; LAYERS; OPACITY; ORGANIC SOLAR CELLS; RAMAN SPECTROSCOPY; WORK FUNCTIONS; X-RAY DIFFRACTION
- Descriptors DEC
- ALCOHOLS; CARBON; COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FUNCTIONS; HYDROXY COMPOUNDS; LASER SPECTROSCOPY; MATERIALS; MICROSCOPY; NANOSTRUCTURES; NANOTUBES; NONMETALS; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SCATTERING; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY