Stress effects of Raman line position during pulsed-laser annealing

It has been found that when a uniaxial tensile stress is applied to silicon, the optical phonon shifts its frequency and splits into a singlet and a doublet. Both the shift and the splitting are found to be proportional to the applied stress. The authors have performed a calculation to determine the phonon frequency shift and splitting for the case of pulsed-laser-annealed silicon. The results are shown for <100> silicon in and for <111> silicon