Published October 2005 | Version v1
Miscellaneous

Recovery of irradiated MOS-transistor structure parameters

  • 1. Inst. fiziki tverdogo tela i poluprovodnikov NAN Belarusi, Minsk (Belarus)

Description

Physical processes taking place under current annealing of irradiated MOS-structures as a part of CMOS logic device and as a result of parasitic p-n-p-n-structure incorporation under influence of alternating voltage were examined. It was determined that operability assurance of CMOS chips exposed to radiation can be achieved by conduction of short-term alternate current (frequency 50 Hz - 200 kHz) annealing cycles

Part of:
Proceedings of the International scientific conference 'Actual problems of solid physics'. Pt.1

Additional details

Additional titles

Original title (Russian)
Восстановление параметров облученных транзисторных MOP-структур

Publishing Information

Imprint Place
Minsk (Belarus)
ISBN
985-476-045-6
Imprint Title
Proceedings of the International scientific conference 'Actual problems of solid physics'. Pt.1
Imprint Pagination
501 p.
Journal Page Range
p. 435-437
Report number
INIS-BY--073

Conference

Title
International scientific conference 'Actual problems of solid physics'
Original Conference Title
Mezhdunarodnaya nauchnaya konferentsiya 'Aktual'nye problemy fiziki tverdogo tela'
Dates
26-28 Oct 2005
Place
Minsk (Belarus)

Optional Information

Notes
6 refs., 1 tab., 2 figs. Imprint:Sbornik dokladov Mezhdunarodnoj nauchnoj konferentsii 'Aktual'nye problemy fiziki tverdogo tela'