Published July 2013 | Version v1
Journal article Metadata-only

Characteristics of a pMOSFET suitable for use in radiotherapy

Creators

  • 1. State University of Novi Pazar, Vuka Karadžića, 36300 Novi Pazar (Serbia)
  • 2. University of Nis, Faculty of Medicine, bul. Dr. Zorana Djindjica 81, 18000 Nis (Serbia)
  • 3. University of Nis, Institute of Radiology, bul. Dr. Zorana Djindjica 48, 18000 Nis (Serbia)
  • 4. University of Belgrade, Vinca Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia)
  • 5. University of Nis, Center of Scientific Research of the Serbian Academy of Sciences and Arts, Univerzitetski trg 2, 18000 Nis (Serbia)
  • 6. University of Nis, Faculty of Electronic Engineering, Aleksandra Medvedeva 14, 18000 Nis (Serbia)

Description

The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 μm and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as a function of the absorbed dose and time after irradiation. The dosimeters with the 1-μm-thick oxide layer can be effectively used for measuring doses in the 0.1–5 Gy range. The dosimeters with 400-nm-thick oxide layer are suitable for measuring doses above 5 Gy. Both types of the dosimeters retain dosimetric information for long periods of time. - Highlights: ► The response of pMOS dosimeters was investigated for doses from 0.1 to 35 Gy. ► The linear dependence between threshold voltage shift and dose was confirmed. ► For doses from 0.1 to 5 Gy dosimetric information was preserved for several days

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apradiso.2013.02.012

Additional details

Identifiers

DOI
10.1016/j.apradiso.2013.02.012;
PII
S0969-8043(13)00070-5;

Publishing Information

Journal Title
Applied Radiation and Isotopes
Journal Volume
77
Journal Page Range
p. 44-49
ISSN
0969-8043
CODEN
ARISEF

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45111157
Subject category
S61: RADIATION PROTECTION AND DOSIMETRY;
Descriptors DEI
ABSORBED RADIATION DOSES; DOSEMETERS; GAMMA RADIATION; GY RANGE 01-10; IRRADIATION; LAYERS; MOSFET; RADIOTHERAPY; SEMICONDUCTOR MATERIALS; THICKNESS
Descriptors DEC
ABSORBED DOSE RANGE; DIMENSIONS; DOSES; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; GY RANGE; IONIZING RADIATIONS; MATERIALS; MEASURING INSTRUMENTS; MEDICINE; MOS TRANSISTORS; NUCLEAR MEDICINE; RADIATION DOSE RANGES; RADIATION DOSES; RADIATIONS; RADIOLOGY; SEMICONDUCTOR DEVICES; THERAPY; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.