Published July 20, 2015 | Version v1
Journal article Metadata-only

Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure

Creators

  • 1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
  • 2. Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
  • 3. Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, Zhejiang (China)
  • 4. Department of Physics, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States)

Description

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO1.3/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism

Additional details

Identifiers

DOI
10.1063/1.4927332;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
3
Journal Page Range
p. 032104-032104.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47056322
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTRONS; GALLIUM OXIDES; INTERFACES; METALS; OXYGEN; PULSES; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SWITCHES; TUNNEL EFFECT; VACANCIES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTROLYSIS; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; LYSIS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SURFACE COATING

Optional Information

Notes
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