Published June 23, 2010
| Version v1
Journal article
Anisotropy and crystal orientation of silicon--application to the modeling of a bent mirror
Creators
- 1. European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex (France)
Description
Matrix formula and MATLAB algorithm are proposed to calculate the stiffness coefficient matrix C, the Young's modulus, shear modulus and Poisson ratio for the silicon crystal in any orientation. Results for Si(110) and Si(311) are given as an example. The anisotropic material properties of the silicon have been used in the mirror width profile optimization for the nano-imaging end-station ID22NI at the ESRF. As the Si(110) is used as the substrate of this multilayer coated KB mirror, the silicon crystal axis [0 0 1] is proposed to orient to the mirror axis. This is the case to have low stress in the mirror and low bending forces from actuators.
Additional details
Identifiers
- DOI
- 10.1063/1.3463333;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1234
- Journal Issue
- 1
- Journal Page Range
- p. 797-800
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 10. international conference on radiation instrumentation
- Acronym
- SRI 2009
- Dates
- 27 Sep - 2 Oct 2009
- Place
- Melbourne (Australia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42003500
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTUATORS; ALGORITHMS; ANISOTROPY; CRYSTALS; EUROPEAN SYNCHROTRON RADIATION FACILITY; FLEXIBILITY; LAYERS; MIRRORS; MONOCHROMATORS; OPTIMIZATION; ORIENTATION; POISSON RATIO; SILICON; SIMULATION; STRESSES; SUBSTRATES; YOUNG MODULUS
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELEMENTS; MATHEMATICAL LOGIC; MECHANICAL PROPERTIES; RADIATION SOURCES; SEMIMETALS; SYNCHROTRON RADIATION SOURCES; TENSILE PROPERTIES
Optional Information
- Notes
- (c) 2010 American Institute of Physics