Published November 1981 | Version v1
Journal article Metadata-only

Defect instability of α-SiO2 X-cut surface at Ar ions irradiation

Creators

  • 1. Leningradskij Gosudarstvennyj Univ. (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Дефектная неустойчивост' поверхности X-среза α-SiO

Publishing Information

Journal Title
Fiz. Tverd. Tela
Journal Volume
23
Journal Issue
11
Series
Fiz. Tverd. Tela.
Journal Page Range
3490-3492
ISSN
0367-3294

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
13693454
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; ARGON IONS; CRYSTAL DEFECTS; EV RANGE 100-1000; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 01-10; LOW PRESSURE; MEDIUM TEMPERATURE; MONOCRYSTALS; RADIATION DOSES; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; ENERGY RANGE; EV RANGE; HEAT TREATMENTS; IONS; KEV RANGE; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS

Optional Information

Notes
Short note; for English translation see the journal Soviet Physics - Solid State (USA).