Published October 1986 | Version v1
Journal article Metadata-only

Electric and tensoelectric investigations of radiation-induced defects in GaAs

Creators

  • 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.

Description

Electric and tensoelectric properties of GaAs crystals irradiated by 2.3 MeV electrons up to integral fluxes (2x1015 - 1x1019) cm-2 at 300 K are investigated. On the basis of electric neutral equation including seven levels (E1-E5, H0, H1) of radiation-induced defects a qualitative analysis of the dose change of specific resistance and the gauge factor of a strain gauge is carried out. The pressure factors for (E1-E5) levels in reference to Γc6 point equalling (∼ 0; 9.6; 11.0; 11.6; 11.6)x10-6 eV/bar at 300 K, respectively, are determined

Additional details

Additional titles

Original title (Russian)
Электрические и тензоэлектрические исследования радиационных дефектов в GaAs

Publishing Information

Journal Title
Izv. Vyssh. Uchebn. Zaved., Fiz.
Journal Volume
29
Journal Issue
10
Series
Izv. Vyssh. Uchebn. Zaved., Fiz.
Journal Page Range
81-87
ISSN
0021-3411
CODEN
IVUFA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
18070943
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
E CENTERS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FERMI LEVEL; GALLIUM ARSENIDES; H CENTERS; HIGH PRESSURE; MEV RANGE 01-10; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PRESSURE DEPENDENCE; RADIATION DOSES; TELLURIUM ADDITIONS; ZINC ADDITIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY LEVELS; ENERGY RANGE; GALLIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; VACANCIES

Optional Information

Notes
For English translation see the journal Soviet Physics Journal (USA).