In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

We demonstrate the production of In2Se3 films as the growth outcome when Bi2Se3 films are deposited using the hot-wall-epitaxy method on the substrates that contain In. The Bi atoms in Bi2Se3 are substituted with the In atoms supplied from the InAs substrates. Despite a large lattice mismatch, α-In2Se3 layers grow semicoherently on InAs(1 1 1). The substitution is induced on the InP substrates only when the substrate surface is roughened. The phase of the resultant In2Se3 depends on the degree of the surface roughness. When the roughness is not strong, layered structures of α-In2Se3 are produced by semicoherent heteroepitaxy not only on (1 1 1) but also on high-index surfaces. On heavily damaged InP substrates, the layers primarily consist of γ-In2Se3. We show, in addition, that the In-induced substitution causes the incorporation of Ga atoms in the In–Se compounds on (In,Ga)As surfaces. (paper)