Published August 2, 2010
| Version v1
Journal article
The effect of stress on the dielectric constants of Bi4Ti3O12 films
- 1. School of Science, Henan University of Science and Technology, Luoyang 471003 (China)
Description
Both experiment and theory have shown that the stress has a notable impact on the polarization of Nd-doped Bi4Ti3O12 films. In this paper, thermodynamic theory is used to study the effect of stress on the dielectric constants of Bi4Ti3O12 films at room temperature with a two-dimensional model. Results indicate that the change of the dielectric constant for a-phase induced by the lattice distortion is far greater than that for c-phase. Considering the domain reorientation, the external tensile stress may lead to an obvious decrease in the effective dielectric constant of Bi4Ti3O12 films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2009.10.035Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2009.10.035;
- PII
- S0040-6090(09)01678-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 20
- Journal Page Range
- p. 5649-5651
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Materials Today Asia conference
- Dates
- 3-5 Sep 2007
- Place
- Beijing (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060009
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH COMPOUNDS; DOPED MATERIALS; PERMITTIVITY; POLARIZATION; STRESSES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TITANATES
- Descriptors DEC
- DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; FILMS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.