Ultraviolet photodetectors based on doped ZnO films

In this paper, we report the realization of ultraviolet (UV) photodetector based on doped ZnO films. The ZnO p-n junction was fabricated on indium tin oxide (ITO) coated glass, which consists of n-type and p-type layers based on Ga-doped (2 at.%) and N-doped (20 at.%) ZnO films, respectively. The current-voltage (IV) characteristics, photosensitivity, photoresponsitivity, and photocurrent gain were derived to determine the performance of the device. At 5 V reverse bias, the ZnO-based UV photodetector exhibits photosensitivity of 10.9, photoresponsivity of 2.1 × 10⁻² AW⁻¹, and photoconductive gain of 7.2 × 10⁻². (paper)