Published April 1978 | Version v1
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Lifetime and radiative efficiency vs density in the strain-confined electron-hole liquid in Ge

Description

Experiments on the electron-hole liquid (EHL) in inhomogeneously stressed Ge were performed in order to obtain information on the lifetime and radiative efficiency as a function of e-h pair density in the strain-confined electron-hole liquid (SCEHL). The data can only be explained if a density-independent recombination mechanism is the most important decay process. The result is shown to be consistent with other experiments indicating that such a mechanism has a negligible effect on the recombination time in unstressed Ge

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.

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Additional details

Publishing Information

Imprint Pagination
17 p.
Report number
LBL--7368

Conference

Title
Conference on recombination in semiconductors.
Dates
30 Aug - 1 Sep 1978.
Place
Southampton, UK.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
10424366
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONS; GERMANIUM; HOLES; SOLID-STATE PLASMA; STRESSES
Descriptors DEC
ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; METALS; PLASMA

Optional Information

Secondary number(s)
CONF-780827--1.