Published April 1978
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Lifetime and radiative efficiency vs density in the strain-confined electron-hole liquid in Ge
Description
Experiments on the electron-hole liquid (EHL) in inhomogeneously stressed Ge were performed in order to obtain information on the lifetime and radiative efficiency as a function of e-h pair density in the strain-confined electron-hole liquid (SCEHL). The data can only be explained if a density-independent recombination mechanism is the most important decay process. The result is shown to be consistent with other experiments indicating that such a mechanism has a negligible effect on the recombination time in unstressed Ge
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.Files
10424366.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 17 p.
- Report number
- LBL--7368
Conference
- Title
- Conference on recombination in semiconductors.
- Dates
- 30 Aug - 1 Sep 1978.
- Place
- Southampton, UK.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10424366
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONS; GERMANIUM; HOLES; SOLID-STATE PLASMA; STRESSES
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; METALS; PLASMA
Optional Information
- Secondary number(s)
- CONF-780827--1.