Published February 15, 1984
| Version v1
Journal article
Deep levels introduced during electron-beam deposition of metals on n-type silicon
Creators
- 1. IBM East Fishkill Laboratories, Hopewell Junction, New York 12533
Description
Near-surface damage introduced during fabrication of Schottky barrier diodes (SBDs) by electron-beam (E-beam) deposition of various metals on n-type silicon has been investigated using deep level transient spectroscopy. The main defect was observed at E/sub c/ -0.42 eV and is annealed out at 400 0C. The interaction of E-beam deposition induced defects with defects which had been introduced in the substrate by irradiation with high-energy electrons was also observed in Pd and Pd/Au SBDs. Therefore erroneous conclusions can be made when using SBDs fabricated by E-beam deposition to characterize defects introduced by some other process near the interface of a SBD
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 55
- Journal Issue
- 4
- Series
- J. Appl. Phys.
- Journal Page Range
- 988-993
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 15063756
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; DEPOSITION; ELECTRON BEAMS; ELECTRON COLLISIONS; FABRICATION; FILMS; GOLD; HIGH TEMPERATURE; ION BEAMS; PALLADIUM; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON; SPECTROSCOPY; TITANIUM
- Descriptors DEC
- BEAMS; COLLISIONS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; LEPTON BEAMS; METALS; PARTICLE BEAMS; PLATINUM METALS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; TRANSITION ELEMENTS