Published May 28, 2012 | Version v1
Journal article Metadata-only

Lutetium-doped EuO films grown by molecular-beam epitaxy

Creators

  • 1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  • 2. Zentrum fuer elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Universitaetsstrasse 1, D-86159 Augsburg (Germany)
  • 3. Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853 (United States)
  • 4. Peter Gruenberg Institute, PGI 9-IT, JARA-FIT, Research Centre Juelich, D-52425 Juelich (Germany)
  • 5. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)
  • 6. Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany)

Description

The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

Additional details

Identifiers

DOI
10.1063/1.4723570;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
22
Journal Page Range
p. 222101-222101.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43112865
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE CARRIERS; CRYSTAL GROWTH; CURIE POINT; DOPED MATERIALS; ELECTRONIC STRUCTURE; EUROPIUM OXIDES; FERROMAGNETIC MATERIALS; GADOLINIUM; KERR EFFECT; LANTHANUM; LAYERS; LUTETIUM; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; POLARIZATION; REFLECTION; SPIN ORIENTATION; THIN FILMS
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; EUROPIUM COMPOUNDS; FILMS; MAGNETIC MATERIALS; MATERIALS; METALS; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; RARE EARTHS; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE

Optional Information

Notes
(c) 2012 American Institute of Physics