A very promising piezoelectric property of Ta2O5 thin films. I: Monoclinic-trigonal phase transition
- 1. Laboratoire des Materiaux et du Genie Physique, UMR CNRS 5628, Minatec - INP Grenoble, 3 parvis Louis Neel, BP 257, 38016 Grenoble Cedex 1 (France)
- 2. CIME Nanotech Minatec, Microsystemes et capteurs, F-38016 Grenoble Cedex 1 (France)
- 3. Institut Neel - CNRS/UJF, Dpt. Matiere Condensee, Materiaux et Fonctions, F-38042 Grenoble (France)
- 4. L2MA, CEA LETI D2NT, F-38054 Grenoble (France)
Description
Ceramic thin films of tantalum oxide of a new trigonal structure (a=12.713(7) A, α=28.201(0)o, space-group R3) were produced by thermal treatments of amorphous deposits on (001)Si wafers, either by electrostatic spray deposition or by injection metal-organic chemical vapor decomposition. This trigonal phase comes from the transformation of a monoclinic phase 11L- or 25L-Ta2O5. The transformation is reversible under oxygen atmosphere and, from results of TEM investigations, occurs mainly via atomic motions along the z unique axis of the monoclinic structure parallel to the polar three-fold axis of the trigonal structure. The non-centrosymmetry and direction of polar axis of the trigonal phase, identified by high resolution TEM imaging, indicate a possibility of very high electric dipole moments linked to a strong piezoelectricity. From results of XPS analyses of both monoclinic and trigonal structures, the binding energies remain similar to those of Ta2O5. As the formation of the trigonal structure gives rise to an important volume expansion, stresses induced in ceramic thin films are likely influencing both properties of birefringence and piezoelectricity which are presented in a separated article (part II). It is mentioned that the formation of trigonal phase does not occur in bulk Ta2O5 samples, for which an incommensurate phase transition has been observed in a previous work. - Graphical abstract: (a) θ/2θ X-ray pattern of the tantalum oxide layer prepared by i-MOCVD, cooled down at 5 deg. C min-1 after a thermal treatment at 850 deg. C under N2 for 1 h. (b) Rhombohedral cell of the Ta2O5 trigonal structure of R3 space-group decorated with its 10 Ta sites. Highlights: → We examine crystallographic properties of a new Ta2O5 trigonal phase. → Its formation occurs only in thin films. → It comes from a reversible transition with a monoclinic phase. → A possibility of strong piezoelectricity is deduced from the present study.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jssc.2011.06.001Additional details
Identifiers
- DOI
- 10.1016/j.jssc.2011.06.001;
- PII
- S0022-4596(11)00312-4;
Publishing Information
- Journal Title
- Journal of Solid State Chemistry
- Journal Volume
- 184
- Journal Issue
- 8
- Journal Page Range
- p. 2023-2032
- ISSN
- 0022-4596
- CODEN
- JSSCBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43058187
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- BINDING ENERGY; CERAMICS; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DECOMPOSITION; DEPOSITS; ELECTRIC DIPOLE MOMENTS; HEAT TREATMENTS; MONOCLINIC LATTICES; ORGANOMETALLIC COMPOUNDS; PHASE TRANSFORMATIONS; PIEZOELECTRICITY; SPACE GROUPS; TANTALUM OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRIGONAL LATTICES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; DIPOLE MOMENTS; ELECTRIC MOMENTS; ELECTRICITY; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ENERGY; FILMS; MICROSCOPY; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METAL COMPOUNDS; SCATTERING; SPECTROSCOPY; SURFACE COATING; SYMMETRY GROUPS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.