Published June 1989
| Version v1
Journal article
Radiation induced surface ordering in semiconductor heterostructures
Creators
- 1. AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Poluprovodnikov
Description
Physicotechnical aspects of a new physical phenomenon, named the effect of small doses or radiation induced ordering are analyzed. It lies in relaxation of thermodynamically nonequilibrium metastable phases under the effect of small doses of penetrating radiation. The promising character of control of electrophysical parameters of semiconductor materials and finished products of electron engineering is based
Additional details
Additional titles
- Original title (Ukrainian)
- Poverkhnevo-posilene radyiatsyijne uporyadkuvannya v napyivprovyidnikovikh geterostrukturakh
Publishing Information
- Journal Title
- Vyisnik Akademyiyi Nauk Ukrains'koyi RSR
- Journal Issue
- no.6
- Series
- Vyisn. Akad. Nauk Ukr. RSR.
- ISSN
- 0372-6436
- CODEN
- VNUKA
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 21078366
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRONS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GAMMA RADIATION; GERMANIUM ALLOYS; HETEROJUNCTIONS; INTERFACES; MEV RANGE 01-10; PHASE STUDIES; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RELAXATION; REVIEWS; SILICON ALLOYS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; IONIZING RADIATIONS; LEPTONS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR JUNCTIONS