Capacitance-voltage characteristics of the p-n-structures based on (111) Si doped with erbium and oxygen

Capacitance-voltage characteristics of tunnel diodes prepared by erbium and oxygen ion co-implantation into single crystal (111) Si have been studied. An anomalous enhancement of the p-n junction capacitance with increasing the reverse bias has been observed at certain temperatures depending on the implantation dose. The increase in capacitance (the decrease of the space charge region width) is associated with formation of deep levels having the high density in the n-layer of p-n junction and also with the electron emission from the levels in the space charge region as voltage increases. The experimental results show that parameters of the defects responsible for the level formation may depend on the erbium and the oxygen implantation dose