Effects of traps on lux-ampere characteristics and inertia of photoresistors based on semi-insulating cadmium-telluride crystals

The energy position of levels affecting the lux-ampere characteristics (LAC), and sluggishness is estimated according to the Rouse model. The electric and photoelectric characteristics are presented of the n-type CdTe crystals (with a linear LAC and 10-4 s sluggishness) the photostorage of which does not exceed 1% of the total signal. One managed to obtain crystals with a linear LAC as a result of introducing centres with the energy Esub(c)-0.6 eV with concentration approximately 1014 cm-3 into the crystals. The concentration of deep centres must be reduced to 1012-1015 cm-3 with respect to the depth of the levels 0.5-0.3 eV for obtaining crystals with sluggishness not exceeding 10-4 s