On the effects of NBTI degradation in p-MOSFET devices

This paper presents the effects of interface trap concentration and threshold voltage shift on NBTI degradation in p-MOSFETs. To explore the degradation mechanisms, transistors having an EOT of 1.1 nm and 5 nm were simulated by applying various stress conditions. The NBTI degradation mechanism was studied by varying the gate voltage, temperature and substrate doping level. The simulations show NBTI degradation in terms of the threshold voltage shift, ΔVth and number of interface traps, ΔNit. The simulation results show an improved degradation trend in terms of ΔVth and ΔNit when the substrate doping level is increased.