Published May 1996
| Version v1
Journal article
Photoinduced strong luminescence enhancement of anodically oxidized porous silicon
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
Strong nonlinear photoluminescence enhancement was observed with increasing illumination time of low intensity (< 1 W/cm2) cw laser excitation (488 nm) from freshly anodically oxidized porous silicon at room temperature. Both the gained maximum absolute value of the photoluminescence intensity and its maximum relative change with illumination time took place in the anodically oxidized layers with moderate extent of oxidation. 33 refs., 6 figs
Additional details
Additional titles
- Original title (Russian)
- Сильное фотоиндуцированное увеличение интенсивности лыхминесценции анодн о окисленного пористого кремния
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 30
- Journal Issue
- 5
- Journal Page Range
- p. 852-863.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28044606
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; CRYSTAL DEFECTS; CRYSTALS; EMISSION SPECTRA; INFRARED RADIATION; INTERFACES; LASER RADIATION; OSCILLATION MODES; OXIDATION; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POROUS MATERIALS; SILICON; SILICON OXIDES; TIME DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA