Published May 4, 2015 | Version v1
Journal article

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3

  • 1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  • 2. Naval Research Laboratory, Washington, DC 20375 (United States)
  • 3. Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

Description

We report on the native defect and microwave properties of 1 μm thick Ba0.50Sr0.50TiO3 (BST) films grown on MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities of native point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV and 3.0 eV due to mixed cation VC and oxygen Vo vacancies. Post growth air anneals reduce these defects with 2.2, 2.65, and 3.0 eV VO and 2.4 eV VC intensities decreasing with increasing anneal temperature and by nearly two orders of magnitude after 950 °C annealing. These low-defect annealed BST films exhibited high quality microwave properties, including room temperature interdigitated capacitor tunability of 13% under an electric bias of 40 V and tan δ of 0.002 at 10 GHz and 40 V bias. The results provide a feasible route to grow high quality BST films by MBE through post-air annealing guided by DRCLS

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
18
Journal Page Range
p. 182903-182903.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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