Published 1989
| Version v1
Journal article
Excitation spectrum of the interstitial iron donor in silicon
- 1. Lund Univ. (Sweden)
Description
Iron-doped silicon has been investigated using transmission and photothermal ionization spectroscopy (PTIS). A spectrum of sharp lines was observed with both techniques between 6100 cm-1 and 6400 cm-1. The photo-ionization cross section spectra were determined with PTIS and photoelectron paramagnetic resonance, and it was concluded that the lines observed in transmission and PTIS originate from transitions to shallow excited donor states at the interstitial iron impurity in the neutral charge state (Feio). The line spectra were analyzed in terms of three overlapping donor series and the origins of these are discussed. (author) 16 refs., 4 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 397-401
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20062080
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DOPING; EFFECTIVE MASS; ELECTRON SPIN RESONANCE; ENDOR; EXCITATION; IMPURITIES; INTERSTITIALS; IRON; SILICON; SPECTRA; SPECTROSCOPY
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY-LEVEL TRANSITIONS; MAGNETIC RESONANCE; MASS; METALS; POINT DEFECTS; RESONANCE; SEMIMETALS; TRANSITION ELEMENTS