Formation and stability of As-H bonds in H-implanted GaAs

The chemical bonding and isochronal annealing of H implanted into GaAs at 80 K has been investigated by infrared absorption measurements. Based upon the frequency shift when deuterium is substituted for H, and an equivalent band formation in InAs, assignment of a new band at 2029 cm-1 is made to As-H centers. Bonding of H at interstitial As of an As-vacancy pair which anneals between 150 and 250 K is suggested as the structure for the defect. A previously reported absorption band at 1834 cm-1 assigned to Ga-H centers in H-implanted GaAs increases in intensity when H is released from As-H centers. (orig.)